Method And Apparatus for Microcontact Printing of MEMS

ABSTRACT

The embodiments disclosed herein are directed to fabrication methods useful for creating MEMS via microcontact printing by using small organic molecule release layers. The disclose method enables transfer of a continuous metal film onto a discontinuous platform to form a variable capacitor array. The variable capacitor array can produce mechanical motion under the application of a voltage. The methods disclosed herein eliminate masking and other traditional MEMS fabrication methodology. The methods disclosed herein can be used to form a substantially transparent MEMS having a PDMS layer interposed between an electrode and a graphene diaphragm.

The application claims the filing-date priority of ProvisionalApplication No. 61/138,014, filed Dec. 16, 2008, the disclosure of whichis incorporated herein in its entirety.

This invention was made with government support under grant numberHR0011-06-1-0045 awarded by the Defense Advanced Research ProjectsAgency. The government has certain rights in this invention.

BACKGROUND

1. Field of the Invention

The disclosure relates to a method and apparatus for microcontactprinting of microelectro-mechanical systems (“MEMS”). More specifically,the disclosure relates to a novel method and apparatus for directpatterning of metallic MEMS through microcontact printing.

2. Description of Related Art

MEMS applied over large areas would enable applications in such diverseareas as sensor skins for humans and vehicles, phased array detectorsand adaptive-texture surfaces. MEMS can be incorporated into large areaelectronics. Conventional photolithography-based methods for fabricatingMEMS have provided methods and tools for producing small features withextreme precision in processes that can be integrated with measurementand control circuits. However, the conventional methods are limited toworking within the existing silicon semiconductor-based framework.Several challenges, including expense, limited size and form-factor, anda restricted materials set, prevent the future realization of new MEMSfor applications beyond single chip or single sensor circuits. Standardprocessing techniques are particularly restrictive when consideringexpanding into large area fabrication. Conventional photolithographymethods are also incompatible with printing flexible substrates MEMS andmicro-sized sensor arrays.

For example, in creating free-standing bridges, cantilevers or membranesfrom limited material, the conventional methods require surface or bulkmicromachining, a series of photolithographic masking steps, thin filmdepositions, and wet chemical or dry etch releases. Such steps requireinvesting in and creating highly specialized mask sets which renderconventional photolithography expensive and time and labor intensive.While the initial investment can be recovered by producing large batchesof identical MEMS devices, the conventional methods are cost prohibitivefor small batches or for rapid prototype production.

Conventional MEMS have been based on silicon and silicon nitride whichare deposited and patterned using known facile processes. Incorporatingmechanical elements made of metal on this scale is difficult because ofthe residual stresses and patterning challenges of adding metal to thesurface. This is because metals are resistant to aggressive plasmaetching. As a result, conventional MEMS processing apply liftoff or wetchemical etching. The surface tension associated with drying solventduring these patterning steps or a later immersion can lead to stiction(or sticking) of the released structure. Stiction dramatically reducesthe production yield.

Another consideration in some large area applications is flexibility.Although photolithography is suitable for defining high fidelitypatterns on planar and rigid substrates, it is difficult to achieveuniform registration and exposure over large areas. Display technologieshave been among the first applications to create a market for large areamicroelectronics. To meet the challenges of new markets for large areaelectronics, alternative means to patterning have been proposed whichinclude: shadow masking, inkjet printing, and micro-contact printing.These techniques are often the only options available for organicsemiconductors and other nanostructured optoelectronic materials, someof which have particularly narrow threshold for temperature, pressureand solvent. Conventional methods are not suitable for MEMS usingorganic semiconductors, nanostructured optoelectronic materials whichmay be fabricated on a flexible substrate.

An alternative approach is to fabricate electronic structures directlyon flexible sheets, but polymeric substrates offering this flexibilityare typically limited to low-temperature processing. Accordingly, hightemperature processing such as thermal growth of oxides and thedeposition of polysilicon on a flexible substrate cannot be supported byconventional processes. Another approach is to fabricate structures onsilicon wafers, bond them to a flexible sheet, and then release thestructures from the silicon by fracturing small supports or by etching asacrificial layer. However, this approach tends to locate the structureson the surface having the highest strain during bending.

Therefore, there is a need for flexible, large area fabrication of MEMSthat does not rely on photolithography nor requires harsh processingconditions.

SUMMARY

In one embodiment, the disclosure relates to a microcontact printingprocess by which continuous metal films are transferred over a reliefstructure to form a suspended membrane in a single step. One or morerelease layers are used to assist the transfer process. The disclosedembodiments are advantageous in enabling MEMS fabrication withoutrequiring elevated temperature processing, high pressure, wet chemicalor aggressive plasma release etching used in conventional processes.Compatibility with low temperature semiconductors on flexible polymericsubstrates, as described herein, enables rapid, near-room-temperaturefabrication of flexible, large area, integrated micro- oropto-electronic/MEMS circuits.

In another embodiment, the disclosure relates to a contact-stamping forsubtractive patterning of organic light emitting diode electrodes usinga relief poly(dimethylsiloxane) (“PDMS”) in a process called QuickRelease PDMS Lift-Off Patterning (QR-PLOP). In contrast to conventionalmethods, QR-PLOP requires no pressure application, temperature elevationor stamp surface modification. Patterning of the OLED electrodes can beenabled by the kinetically-controlled adhesion of the PDMS relief stampto the surface to be patterned. Patterning is implemented by placing arelief-patterned viscoelastic PDMS stamp in contact with a planar metalelectrode layer and subsequently peeling off the stamp quickly,increasing the weak adhesion energy of the elastomer to the metal anddefining features by subtractive means. Patterning is a function of filmthickness, feature geometry, and peel direction of stamp release.

In one embodiment, the disclosure relates to a method for micro-contactprinting of MEMS by providing a MEMS structure and a support structure.The MEMS structure is defined by a plurality of ridges separated by agap therebetween. The ridges can be constructed from PDMS. The MEMSsupport structure includes a substrate on which a release layer and ametal layer are formed. The MEMS structure is brought to contact withthe support structure such that the top of the ridges adhere to themetal layer. The MEMS structure is then rapidly peeled away from thesupport structure so as to delaminate substantially all of the metallayer from the support structure. In one embodiment, at least a portionof the release layer is also separated from the support structure. Thepeeling velocity is in the range of about 3-6 m/sec. Once peeled, thelayer forms a suspended membrane over the plurality of ridges such thata diaphragm is formed over the gaps separating the plurality of ridges.

In another embodiment, the disclosure relates to a method for forming aMEMS capacitor array by forming a first electrode layer over asubstrate. A PDMS structure is then formed over the first electrodelayer. The PDMS structure defines a plurality of ridges in which atleast a pair of adjacent ridges are separated by a gap. A metal filmdeposited on a surface of a support structure in contact with the topportion of the plurality of ridges. The metal layer is then allowed toadhere to the tops of the ridges. Once adhered, the support structure isthen rapidly peeled off from the PDMS structure. The rapid peel offprocess allows substantially all of the metal layer to delaminate fromthe support structure and adhere to tops of the PDMS ridges. The metallayer forms a suspended membrane over the gap between the pair ofadjacent ridges. The final structure is a capacitor with PDMS supportridges, a first electrode layer and a metal layer on top of the PDMSridges acting as a suspended second electrode, whose spacing from thefirst can be controlled with a DC bias voltage.

In still another embodiment, the disclosure relates to a high resolutionpatterning of the metal film. Higher resolution patterning of thetransferable metal film can be achieved by using the topography of amolded PDMS substrate to define features instead of using a shadow mask.The process includes the steps of (1) Curing PDMS or other elastomeragainst a featured mold so that the desired pattern is raised on thefinal PDMS substrate; (2) Depositing the organic release layer and metalfilm using a line-of-sight deposition process such as thermalevaporation so that the film multilayer on top of the PDMS features isdiscontinuous from the multilayer formed at background height of thePDMS (in this way, the features of the PDMS act as an in situ mask); and(3) Bringing the metal film into contact with the device substrate whichcontains a plurality of support ridges over a conducting bottomelectrode and rapidly removed so that the metal film is transferred tothe support ridges to form the final structure. Using this procedure,devices which have clearly defined edges and arbitrarily designedgeometries are formed which were otherwise unattainable with theconventional shadow mask film patterning.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other embodiments of the disclosure will be discussed withreference to the following exemplary and non-limiting illustrations, inwhich like elements are numbered similarly, and where:

FIG. 1A is a schematic representation of a conventional MEMS device;

FIG. 1B shows an application of the MEMS device of FIG. 1A as anactuator;

FIG. 1C shows an application of the MEMS device of FIG. 1A as a sensor;

FIGS. 2A-2C are schematic representations of a method for constructingelectrodes using QR-PLOP according to one embodiment of the disclosure;

FIGS. 3A-3D pictorially illustrate a method for fabricating a MEMSsupport structure;

FIGS. 4A-4D pictorially illustrate a method for fabricating a transfersupport structure for depositing an electrode layer over the PDMSridges;

FIG. 5 shows an exemplary processes for PDMS lift-off transfer accordingto one embodiment of the disclosure;

FIG. 6A schematically illustrates a MEMS structure prepared according tothe process of FIG. 5;

FIG. 6B is an optical micrograph of the MEMS devices whose structure isshown in of FIG. 6A;

FIG. 6C is an exploded view of FIG. 6B;

FIG. 7A is a schematic characterization of an ideal device geometry;

FIG. 7B is a schematic characterization of an actual device geometry;

FIGS. 8A and 8B schematically illustrate device performance measurementthrough capacitance;

FIG. 8C is capacitance of the devices showing variable capacitoractuation; testing;

FIGS. 9A and 9B show the profile of a gold diaphragm on a MEMS structurewhen actuated with a 40 V bias;

FIG. 10 shows another deflection measurement using optical profilometry;

FIG. 11 shows actuation with nanometer precision;

FIG. 12 schematically shows formation of a multilayer MEMS structureaccording to another embodiment of the disclosure;

FIG. 13 shows a MEMS structure formed on a flexible substrate accordingto one embodiment of the invention; and

FIG. 14 shows an embodiment of the disclosure formed on a flexibleplastic substrate.

DETAILED DESCRIPTION

FIG. 1A is a schematic representation of a conventional MEMS device.MEMS 100 includes substrate 110 having supports 112 and 114. Supports112 and 114 can be viewed as a plurality of ridges separated by gap 115.Supports 112 and 114 uphold layer 116. Gap 115 is defined by theseparation distance between ridges 112 and by the height (h).Conventionally, layer 116 is defined by a metal layer and MEMS structure100 is formed through photolithography as described above. As stated,the conventional processes lacked ability to produce MEMS devices overlarge areas and on flexible substrates.

FIG. 1B shows an application of the MEMS device of FIG. 1A used as anactuator. In FIG. 1B, structure 100 is connected to voltage source 120through substrate 115 and diaphragm 116 which act as electrodes. Thebias provided by voltage source 120 creates an electrostatic forcebetween electrode 115 and layer 116, causing the latter to act as adiaphragm by deflecting towards electrode 115. The relationship betweenthe electrostatic force and the deflection is described in Equation 1 asfollows:

F_(el)∝V²/d²  (1)

In Equation 1, F_(el) denotes the electrostatic force, V is the biasvoltage and d is the separation distance between substrate 115 and metallayer 116. The actuator of FIG. 1B converts

FIG. 1C shows an application of the MEMS device of FIG. 1A for use as asensor. In FIG. 1C, external force F_(ext) is applied to MEMS structure100 causing deflection in metal layer 116. The external force ismeasurable as it creates a change in capacitance (C) of the MEMS device.The capacitance can be determined by Equation 2 as follows:

C∝l/d  (2)

It should be noted that a metal layers is used as merely an exemplaryembodiment. Any material which can be formed in to a film can be used.Such material include viscoelastic polymers and conductive films. In oneembodiment, a conductive film is used. The conductive film can include ametal, a conducting metal oxide, grapheme sheet, polymer thin film,metal oxide/nitride/sulfide membrane or a doped polymer. An exemplaryconductive film is indium tin oxide (“ITO”). In another embodiment, anelectrically insulating membrane is coated with a conductive layer tofirm a diaphragm.

FIGS. 2A-2C are schematic representations of a method for constructingelectrodes according to one embodiment of the disclosure. The method canbe defined as quick release PDMS lift-off patterning (“QR-PLOP”). Theexemplary method starts in FIG. 2A by providing substrate 210 havingthereon release layer 212 and metal film 214. Substrate 210 can compriseglass, plastic, silicon and other flexible or rigid film or bulkmaterial.

Release material 212 may include conventional release material. Apreferred release layer comprisesN,N′-diphenyl-N-N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine(“TPD”) having a thickness of about 90 nm. The metal layer preferablycomprises a material capable of acting as an electrode. In oneembodiment, metal layer 214 defines a gold layer with a thickness ofabout 140 nm. The metal layer can be deposited, for example, throughshadow masking over the release layer.

Next, as illustrated in FIG. 2B, a MEMS structure (i.e., stamp 216)having a support layer and a plurality of ridges is provided. The MEMSstructure is prepared as a function of its intended use. A common MEMSstructure which is used in applications ranging from pressure sensor toarray detectors includes a base layer supporting a plurality of ridges.The ridges can be spaced apart such that each pair of adjacent ridges isseparated by a gap. In one embodiment of the invention, the gap is about1-50 nm. The gap can also be in the range of 5-25 μm. Finally, asillustrated in FIG. 2C, the stamp is lifted rapidly from the substrate,lifting with it a layer of release material. A release rate of about 5in/sec or more has been found effective in removing substantially all ofthe metal film from the substrate. A slower peeling rate may besufficient for use with thinner metal film or with different releasematerial.

Successful patterning also depends on the film thickness. In oneembodiment of the disclosure thin metal films having a thickness of lessthan 20 nm replicated features as small as 13 μm. Thicker metal filmshaving thickness in excess of about 100 nm are generally highlyresistant to patterning. Instead, these thick films are seen to producecontinuous film transfer across discontinuous stamp surfaces. Byengineering the transfer process according to the film thickness, thesuspended membranes and bridges which are used in many MEMS devices canbe created in an additive process, termed PDMS Lift-Off Transfer (PLOT).

FIGS. 3A-3D pictorially illustrate a method for fabricating a MEMSsupport structure. In FIG. 3A, a MEMS support material such as PDMS 310is molded into a master mold 315. The mold can be of any shape. In apreferred embodiment, the mold is designed to produce a MEMS structurewith a base layer supporting a plurality of ridges.

Next, an electrode-coated substrate is brought into contact with PDMSlayer 310. As shown in FIG. 3B, the electrode-coated substrate compriseselectrode 325 and substrate 320. Substrate 320 can include glass,plastic, or other conventional substrate material. Among others,electrode 325 can comprise conductive material such as gold, silver andIndium Tin Oxide (ITO). In one embodiment of the invention, one or moremetal layers are deposited by thermal evaporation.

In FIG. 3C, the PDMS is cured to form a solid structure. In a preferredembodiment, PDMS was cured at 50° C. for about one hour. Otherconventional curing methods can be equally used without departing fromthe principles of the disclosure. Finally, in FIG. 3D, mold 310 isremoved from the cured MEMS support structure 300. MEMS supportsstructure 300 includes substrate 320, electrode 325 and PDMS 315. Oncethe MEMS support structure is prepared, one or more thin layers ofelectrodes are deposited over the PDMS ridges according to theprinciples disclosed herein.

FIGS. 4A-4D pictorially illustrate a method for fabricating a transfersupport structure for depositing an electrode layer over the PDMSridges. In FIG. 4A, substrate 400 is provided to receive the metal film.Substrate 400 can comprise PDMS. While PDMS is used in the exemplaryembodiment of FIG. 4A, the inventive principles can be applied equallyto other substrate material.

Next, in FIG. 4B, substrate 400 is treated with oxygen plasma. In FIG.4C, an organic release layer is evaporated through a shadow mask to forma release layer 410 on substrate 400. The release layer can comprise anyconventional release material. In one embodiment, the release layercomprises TPD at a thickness of about 90 nm. Release layer 410 can bethermally evaporated onto substrate 400 through a shadow mask.

In FIG. 4D, metal layer 420 is deposited over release layer 410. In oneembodiment, the metal layer is deposited by evaporating the metalelectrode through the same shadow mask used for thermally depositingrelease layer 410. The metal layer can comprise any material suitablefor use as an electrode in the desired MEMS structure. In one embodimentof the disclosure, the metal layer comprises gold and in anotherembodiment the metal layer comprises silver.

Once the MEMS structure and the support structure have been prepared,the MEMS structure can be brought into conformal contact with thesupport structure so as to form a adhesive bond between the ridges (orthe tops of the ridges) of the MEMS structure and the metal layer on thesupport structure. Once an adhesive bond is formed, the MEMS structuremay be peeled from the support structure so as to delaminatesubstantially all of the metal layer atop of the support structure. Inpractice, a portion of the release layer interposed between the metallayer and the substrate adheres to the metal layer and is delaminatedfrom the support structure. The critical peeling velocity may depend onsuch factors including the size, thickness and the composition of themetal layer. In one embodiment of the invention, a peeling velocity ofabout 3-6 m/see was found sufficient to delaminate all of the metallayer from the support structure.

FIG. 5A shows an exemplary processes for PDMS lift-off transferaccording to one embodiment of the disclosure. The MEMS structureprepared in FIG. 3 and the support structure prepared in FIG. 4 wereused to illustrate the process of FIG. 5. Specifically, MEMS structure500 includes electrode 525 and PDMS 515. PDMS 515 is defined by proximaland distal sides. The proximal side of PDMS 515 faces electrode 525. Thedistal side of PDMS 515 includes a plurality of ridges that are spacedapart. Support structure 550 includes release layer 525 and metal layer520.

In FIG. 5B, MEMS structure 500 and support structure 550 are broughtinto conformal contact. Here, each of the ridges formed on the distalend of PDMS 515 contacts metal layer 520. The duration of the contactcan be a function of the metal layer and the pressure applied. In theexemplary embodiment where a PDMS MEMS structure was used to adhere to,and lift off, gold metal layer from a support structure, no pressure wasapplied and the process was conducted at room temperature.

In FIG. 5C, MEMS structure 500 is peeled off from the support structure550. As discussed, the peeling speed should be controlled to ensure thatsubstantially all of the metal layer is lifted from the surface of thesupport structure 550. It has been found that typically a portion of therelease layer 515 is also removed along with the delaminated metal layerand transfers over to the MEMS structure. Conventional methods can beused to remove any excess release material transferred over to the MEMSstructure 500 if desired or required. Once metal layer 520 istransferred to MEMS structure 500, the metal layer adheres to the ridgesat the distal end of PDMS 515.

In one embodiment, transfer is achieved by placing a relief patternedwith viscoelastic PDMS ridges in contact with the planar metal layer,and peeling off the stamp quickly, increasing the weak adhesion energyof the elastomer to the metal.

The contact delamination of FIGS. 5A-5C can be implemented on metallayer films of different thickness. In one embodiment of the disclosure,the delaminated metal film has a thickness of about 20 nm or more. In anexemplary embodiment, a metal layer having a thickness of about 140 nmwas delaminated. Once transferred, the metal layer forms a suspendedmembrane (or diaphragm) over the plurality of PDMS ridges, therebycompleting the MEMS structure.

It should be noted that a rapid peel rate enhances adhesive forcedbetween metal layer 520 and elastomeric features of the layer to providetransfer when the MEMS structure is lifted away. A rapid peel rate ofabout 5 m/sec enhances the adhesion between a viscoelastic polymer (inthis case, PDMS) and silicon component sufficiently to allow thesecomponents to be lifted from the substrate. Below a critical thresholdpeel rate, the increase in adhesive force will not be sufficient todelaminate the metal film from the release layer. The peel rate dependson, for example, metal thickness, support geometry, release layer andthe composition of the metal film.

FIG. 6A shows a MEMS structure prepared according to the process of FIG.5. Specifically, the MEMS structure includes substrate 610 whichsupports electrode 620. PDMS grating 630 is formed over the substrate asdiscussed in relation to FIG. 3 and the transferred gold membrane 640 istransferred onto grating 630 with a QRPLOT process described above. Asseen in FIG. 6A, the transferred gold membrane completes the MEMSstructure providing a suspended diaphragm over grating 630. Thetransferred gold layer was 140 nm thick.

FIG. 6B is an exploded view of the MEMS structure of FIG. 6A.Specifically, FIG. 6B shows gold electrodes transferred over to the MEMSstructure using an optical microscope. As seen in FIG. 6A, thetransferred gold membrane is spread over the ridges of the MEMS supportstructure, making contact with a plurality of the ridges. The largestgold membrane which appears on the lower right hand side of FIG. 6B hada 1 mm diameter.

FIG. 6C is an exploded view of the MEMS structure of FIG. 6B.Specifically, FIG. 6C shows edges 630 of the MEMS diaphragm as thinnerthan its central regions resulting in limited transfer over the gaps.The formation of thin edges 630 are the results of shadow masking. Thehorizontal lines 640 are the PDMS support ridges underneath the goldMEMS diaphragm. The dark circles tracking the edges is caused by shadowmasking.

FIG. 7A is a schematic characterization of an ideal device geometry. Asshown in FIG. 7A, ITO layer 710 supports PDMS ridges 720, 722 and 724.Gold layer 730 rests on, and is supported by PDMS ridges 720, 722 and724. Air gaps 725 and 727 were designed to have a width of about 23+/−1μm, and the air gap height was designed to be about 1.56+/−0.02 μm.

FIG. 7B is a schematic characterization of an actual device geometrywhich follows the design of FIG. 7A. In practice, release layer 740adhered to gold layer 730 during the transfer process. In addition,underlayer 705 was a byproduct of creating support ridges 720, 722 and724. Underlayer 705 had a thickness of about 1-12 μm. Underlayer 705changes the device capacitance depending on its thickness. In FIG. 7B,the PDMS support width was about 45+/−1 μm and the thickness of goldlayer 730 was about 140 nm. To total surface area of device 700 wasabout 0.8 mm². Two different techniques were used to measure performanceof the device shown in FIG. 7B. The techniques were capacitancemeasurement and deflection of the MEMS diaphragm.

FIGS. 8A and 8B schematically illustrate device performance measurementthrough capacitance testing. The testing is premised on the fact thathigher voltages increase electrostatic force, thereby deflecting theMEMS diaphragm and decreasing the gap. The device under study in FIG. 8,had gold diaphragm deposited according to the disclosed principles. Thediaphragm height was about 1.2 μm. In FIGS. 8A and 8B, MEMS golddiaphragm 810 was supported by PDMS ridges 822 and 824. ITO layer 830acted as the second electrode. Noting the interrelation of electrostaticforce with diaphragm deflection through Equations 1 and 2 above, thesupplied voltage was changed and the deflection in diaphragm 810 wasmeasured.

FIG. 8C is capacitance of the devices showing variable capacitoractuation. Each device had gold diaphragm of about 1 mm in diameter. Thediaphragm rested on PDMS ridges which were about 1.8 μm high and 45 μmwide. The top (gold) and the bottom (ITO) electrodes were about 3 μmapart. As evident from FIG. 8C, capacitance increase in both devices 1and 2 demonstrates bridge deflection.

The deflection of MEMS diaphragm can be directly observed when thedevice is actuated during optical profilometry. FIGS. 9A and 9B show theprofile of a gold diaphragm on a MEMS structure when actuated with a 40V bias. In FIG. 9A, the probe tip is not biased and the diaphragm heightremains unchanged at about 11.7 μm. In FIG. 9B, the probe tip is biasedto 40V and the height of the diaphragm drops to about 0.03 μm relativeto the initial height.

FIG. 10 shows another deflection measurement using optical profilometry.The device deflection of a membrane can be directly observed when thedevice is actuated during optical profilometry. In FIG. 10, a deflectionof 20-30 nm was observed when the gold diaphragm was biased by 40 V. Thechange in the relative height of the diaphragm at regions not supportedby the PDMS ridges dropped by 20-30 nm.

Increasing the size of the gap can affect deflection. FIG. 11Aschematically shows a device prepared according to the disclosedembodiments for deflection testing. The device of FIG. 11A comprised ofa gold diaphragm of about 1 mm in diameter. The gold layer had athickness of about 140 nm. The PDMS ridges were about 20 μm wide and 2.2μm high. A PDMS under-layer 1100 of about 12 μmwas also added to theMEMS configuration of FIG. 11.

FIG. 11 B shows the deflection in MEMS device of FIG. 11A with increasedvoltage. FIGS. 11A and B show that the capacitance, deflection, orvoltage requirements can be fine-tuned to satisfy the needs of aspecific application. It can be seen that as the voltage increases, sodoes the deflection of the gold diaphragm. Adding the underlayerincreases total height of the device and decreases deflection. Thedevice of FIG. 11A had nanometer-scale deflections which was finer thana device with a thinner gap which used the same voltage.

FIGS. 12A-12C schematically show formation of a multilayer MEMSstructure according to another embodiment of the disclosure. In FIG.12A, a multilayer structure is formed over a PDMS substrate.Specifically, FIG. 12A shows PDMS substrate 1210 supporting TPD layer1215, gold layer 1220, silver layer 1230 and organic dye layer 1240.Layer 1240 can contain Alq₃, aluminum tris-8-hydroxyquinoline. In FIG.12A, structure 1202 defines the transfer pad and structure 1204 definesthe MEMS stamp structure. MEMS stamp structure 1204 includes ridges 1250and ITO 1260. ITO 1260 defines an electrode for the MEMS structure 1204.

MEMS structure 1204 is brought into conforming contact with the transferpad 1204. MEMS stamp structure 1204 is delaminated from the transfer padand shown in FIG. 1213. In one embodiment, structures 1215, 1220,1230,1240 delaminate as a stack from the transfer pad 1210 and stick tothe MEMS structure 1204. MEMS structure 1204 can define an electrode. Asillustrated, ridges 1206 support organic dye layer 1240. Metal layers1220 and 1230 are interposed between organic dye layer 1240 and TPDrelease layer 1215.

FIG. 13 schematically shows conformal transfer of a MEMS structureaccording to one embodiment of the disclosure. Specifically, FIG. 13shows a conformal transfer of a MEMS structure from a flat substrate toa curved substrate. In FIG. 13, curved surface 1310 rotates clockwise asshown by the arrow.

The principles disclosed above regarding transferring from one flatsurface to another can be employed for transferring from a curve surfaceto a flat surface. Namely, a release layer can be used at substrate 1320to enable easy deposition of the MEMS device on curved surface 1310.Moreover, using the disclosed principles roll-to-roll transfer can bemade from a curved substrate to another flat or curved substrate.

FIG. 14 shows an embodiment of the disclosure formed on a flexibleplastic substrate. Namely, the lift-off transfer process described abovewas used to form MEMS structures 1410 and 1420, among others, on theflexible and transparent ITO electrode 1430.

An additional embodiment of the disclosure relates to providing a MEMSstructure made from an entirely transparent material making the devicestructure and substrate invisible to the naked eye. For instance, thecomponents of a device could be made of the following: indium tinoxide-bottom electrode, PET or glass-substrate, PDMS-support structures,graphene-top electrode/membrane material. Graphene is an electricallyconductive material made up of a single or several sheets of graphite.At suitable thicknesses, graphene is transparent in the visible range ofthe spectrum. By creating fully transparent MEMS, several potentialapplications can be made, including microphone arrays on windows anddisplays (e.g., computer, television, etc.) for discrete sound recordingand sound source location and pressure sensor arrays on automobiles andcars, which provide fluid flow information without changing theaesthetics of the vehicle body. In an exemplary application of graphene,a MEMS structure may be made by forming a PDMS structure interposedbetween an ITO electrode and a sheet of graphene. The graphene membranemay be supported by a plurality of the PDMS ridges similar to thosedescribed above. The MEMS device provides transparency to the naked eyewhile providing functional capabilities described herein.

While the principles of the disclosure have been illustrated in relationto the exemplary embodiments shown herein, the principles of thedisclosure are not limited thereto and include any modification,variation or permutation thereof.

1. A method for micro-contact printing of a MEMS structure, the methodcomprising: providing a MEMS structure having a plurality of ridges;providing a support structure having a substrate for supporting arelease layer and a conducting layer; bringing the MEMS structure intoconformal contact with the support structure; and rapidly peeling theMEMS structure from the support structure so as to delaminatesubstantially all of the conducting layer metal layer from the supportstructure; wherein the peeling velocity is in the range is about 3 m/secor more and wherein the metal layer forms a suspended membrane at a gapbetween a pair of the plurality of ridges.
 2. The method of claim 1,wherein the peeling velocity is about 5 m/sec.
 3. The method of claim 1,wherein the step of providing the MEMS structure further comprises:forming a layer of indium tin oxide (“ITO”) over a substrate; depositingan elastomeric layer over the ITO layer; and forming the plurality ofridges in the elastomeric layer.
 4. The method of claim 3, wherein theelastomeric layer is poly(dimethylsiloxane) (“PDMS”).
 5. The method ofclaim 1, wherein the step of providing the MEMS structure furthercomprises: (i) spin casting PDMS and curing agent at a weight ratio ofabout 10:1 in a mold; (ii) forming an ITO-coating glass substrate; (iii)adjoining the cured PDMS to the substrate so as to interpose the ITOcoating between the glass and the cured PDMS; and (iv) removing the moldfrom the cured PDMS.
 6. The method of claim 5, wherein the PDMS includesa plurality of ridges in which adjacent ridges are separated by a gap ofabout 10-50 nm.
 7. The method of claim 5, wherein the PDMS includes aplurality of ridges in which adjacent ridges are separated by a gap ofabout 1-50 μm.
 8. The method of claim 1, wherein the step of providing asupport structure further comprises depositing a van der Waal bondedorganic film.
 9. The method of claim 8, wherein the van der Waals bondedorganic film defines a molecular thin film.
 10. The method of claim 8,wherein the step of providing a support structure further comprisesdepositing a TPD layer over a molded substrate to achieve adiscontinuous film with a plurality of raised portions for defining thedesired pattern and evaporating the metal layer over the TPD layer toform a discontinuous metal film.
 11. The method of claim 8, wherein thevan-der-Waals bonded organic film isN,N′-diphenyl-N-N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine(“TPD”).
 12. The method of claim 8, wherein the step of providing asupport structure further comprises: depositing a layer of TPD over thesubstrate; evaporating the metal layer over the TPD layer by shadowmasking.
 13. The method of claim 1, wherein the metal layer is selectedfrom the group consisting of gold, silver, and other thermallyevaporated metals.
 14. The method of claim 1, wherein the MEMS structuredefines a capacitor array.
 15. The method of claim 1, wherein theconductive layer is selected from the group consisting of a metal, aconducting metal oxide or a doped polymer.
 16. A method for forming aMEMS capacitor array, the method comprising: forming a first electrodelayer over a substrate; forming a PDMS structure over the firstelectrode layer, the PDMS structure defining a plurality of ridges inwhich at least a pair of adjacent ridges are separated by a gap;conformingly coupling the plurality of ridges to a metal film depositedon a surface of a support substrate; and rapidly separating the supportstructure from the substrate to delaminate substantially all of themetal layer from the support structure and to form a suspended membraneover the gap between the pair of adjacent ridges.
 17. The method ofclaim 16, wherein the step of rapidly separating the support structurefurther comprises peeling the MEMS structure away from the supportstructure at a rate of about 3-6 m/sec.
 18. The method of claim 16,further comprising biasing the first electrode layer and the metal layerto a voltage of about 0-80 V.
 19. The method of claim 16, furthercomprising using a grapheme layer in place of the metal film.
 20. Asensor formed according to the method of claim
 16. 21. A method formicrocontact printing of MEMS, the method comprising: treating a PDMSlayer with oxygen plasma; depositing a layer of an organic release layerover the PDMS layer; depositing a metal layer through the shadow mask;forming a stamp defined by a plurality of ridges supported by a backing;contacting the stamp with the metal layer to form a bonding between theplurality of ridges and the metal layer; rapidly peeling the stamp toremove the metal layer from the transfer pad; wherein substantially allof the metal layer is removed from the transfer pad.
 22. The method ofclaim 21, wherein a portion of the organic release layer transfers withthe metal layer.
 23. The method of claim 21, wherein the step of forminga stamp frame further comprises: providing a mold; depositing PDMS overthe mold to form a first layer, the first layer having a backingsupporting the plurality of ridges; depositing an electrode layer overthe PDMS layer; curing the PDMS layer; and removing the stamp from themold.